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ADVANCE INFORMATION
ZXMC3A17DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
SO8
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package
APPLICATIONS
* Motor drive * LCD backlighting
Q1 = N-channel
Q2 = P-channel
ORDERING INFORMATION
DEVICE ZXMC3A17DN8TA ZXMC3A17DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
* ZXMC
3A17 Top View
PROVISIONAL ISSUE C - AUGUST 2004 1
SEMICONDUCTORS
ZXMC3A17DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = 10V; T A =25C) (b)(d) (V GS = 10V; T A =70C) (b)(d) (V GS = 10V; T A =25C) (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) (d) Linear Derating Factor Power Dissipation at T A =25C (a) (e) Linear Derating Factor Power Dissipation at T A =25C (b) (d) Linear Derating Factor Operating and Storage Temperature Range PD PD T j , T stg
(b)
ADVANCE INFORMATION
SYMBOL V DSS V GS ID
N-channel 30 20 5.4 4.3 4.1 23 2.6 23 1.25 10 1.8 14 2.1 17
P-channel -30 20 -4.4 -3.6 -3.4 -20 -2.5 -20
UNIT V V A
I DM IS I SM PD
A A A W mW/C W mW/C W mW/C C
-55 to +150
THERMAL RESISTANCE
PARAMETER Junction to Ambient
(a) (d)
SYMBOL R JA R JA R JA
VALUE 100 70 60
UNIT C/W C/W C/W
Junction to Ambient (a) (e) Junction to Ambient
(b) (d)
NOTES: (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with two active die running at equal power.
PROVISIONAL ISSUE C - AUGUST 2004
SEMICONDUCTORS
2
ADVANCE INFORMATION
CHARACTERISTICS
ZXMC3A17DN8
PROVISIONAL ISSUE C - AUGUST 2004 3
SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge t d(on) tr t d(off) tf Qg Qg Q gs Q gd 2.9 6.4 16 11.2 6.9 ns ns ns ns nC V DS = 15V, V GS = 5V I D = 3.5A Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3)
(1) (2) (3)
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs
30 0.5 100 1.0 0.050 0.065 10
V A
I D = 250 A, V GS =0V V DS =30V, V GS =0V
nA
V
V GS =20V, V DS =0V
I D = 250 A, V DS =V GS V GS = 10V, I D = 7.8A V GS = 4.5V, I D = 6.8A
S
V DS = 10V, I D = 7.8A
C iss C oss C rss
600 104 58.5
pF pF pF V DS = 25V, V GS =0V f=1MHz
V DD = 15V, I D =3.5A R G 6.0 , V GS = 10V
12.2 1.7
nC nC nC V DS = 15V, V GS = 10V I D = 3.5A
2.4
V SD t rr Q rr
0.85
0.95
V
T j =25C, I S = 3.2A, V GS =0V
18.8 14.1
ns nC
T j =25C, I F = 3.5A, di/dt=100A/ s
Measured under pulsed conditions. Pulse width 300ms; Duty cycle 2%. Switching characteristics are independent of operating junction temperature. For design aid only, not subject to production testing.
PROVISIONAL ISSUE C - AUGUST 2004
SEMICONDUCTORS
4
ADVANCE INFORMATION
ZXMC3A17DN8
P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.7 2.9 29.2 8.7 8.3 ns ns ns ns nC V DS = -15V, V GS = -5V I D = -3.2A Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3)
NOTES: (1) (2) (3) Measured under pulsed conditions. Pulse width 300ms; Duty cycle 2%. Switching characteristics are independent of operating junction temperature. For design aid only, not subject to production testing.
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs
-30
V
I D = -250 A, V GS =0V A V DS = -30V, V GS =0V V GS =20V, V DS =0V I D = -250 A, V DS =V GS V GS = -10V, I D = -3.2A V GS = -4.5V, I D = -2.5A
-1.0
100 -1.0
nA V
0.070 0.110 6.4 S
V DS = -15V, I D = -3.2A
C iss C oss C rss
630 113 78
pF pF pF V DS = -15V, V GS =0V f=1MHz
V DD = -15V, I D = -1A R G 6.0 , V GS = -10V
15.8 1.8 2.8
nC nC nC V DS = -15V, V GS = -10V I D = -3.2A
V SD t rr Q rr
-0.85
-0.95
V
T j =25C, I S = -2.5A, V GS =0V
19.5 16.3
ns nC
T j =25C, I S = -1.7A, di/dt=100A/ s
PROVISIONAL ISSUE C - AUGUST 2004 5
SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
N-CHANNEL TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE C - AUGUST 2004
SEMICONDUCTORS
6
ADVANCE INFORMATION
ZXMC3A17DN8
N-CHANNEL TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE C - AUGUST 2004 7
SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
P-CHANNEL TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE C - AUGUST 2004
SEMICONDUCTORS
8
ADVANCE INFORMATION
ZXMC3A17DN8
P-CHANNEL TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE C - AUGUST 2004 9
SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
SO8 PACKAGE OUTLINE (Conforms to JEDEC MS-012AA Iss. C)
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters DIM Min A A1 D H E L 1.35 0.10 4.80 5.80 3.80 0.40 Max 1.75 0.25 5.00 6.20 4.00 1.27 Min 0.053 0.004 0.189 0.228 0.150 0.016 Max 0.069 0.010 0.197 0.244 0.157 0.050 h e b c Inches DIM Min Max Min Max 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimeters Inches
(c) Zetex Semiconductors plc 2004
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
PROVISIONAL ISSUE C - AUGUST 2004
SEMICONDUCTORS
10

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